LGE · FETs & Power MOSFETs · MPN LGE3M650170B
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| Gate Charge(Qg) | 23nC |
|---|---|
| Drain to Source Voltage | 1.7kV |
| Output Capacitance(Coss) | 13pF |
| Current - Continuous Drain(Id) | 7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 62W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.8pF |
| RDS(on) | 850mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 194pF |
| Type | N-Channel |
1.7kV 7A 4V 62W 850mΩ 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs RoHS