LGE LGE3M50120Q

LGE · FETs & Power MOSFETs · MPN LGE3M50120Q

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Specifications

Drain to Source Voltage1.2kV
Gate Charge(Qg)120nC
Output Capacitance(Coss)106pF
Current - Continuous Drain(Id)58A
Operating Temperature --55℃~+175℃
Pd - Power Dissipation344W
Reverse Transfer Capacitance (Crss@Vds)5.2pF
RDS(on)50mΩ
Number1 N-channel
Input Capacitance(Ciss)2.75nF
TypeN-Channel

Technical details

1.2kV 58A 344W 50mΩ 1 N-channel N-Channel TO-247-4 Single FETs, MOSFETs RoHS

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