LGE LGE3M40120Q

LGE · FETs & Power MOSFETs · MPN LGE3M40120Q

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Specifications

Drain to Source Voltage1.2kV
Gate Charge(Qg)128nC
Output Capacitance(Coss)108pF
Current - Continuous Drain(Id)59A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)13pF
RDS(on)54mΩ
Number1 N-channel
Input Capacitance(Ciss)2.36nF
TypeN-Channel

Technical details

1.2kV 59A 4.5V 300W 54mΩ 1 N-channel N-Channel TO-247-4 Single FETs, MOSFETs RoHS

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