LGE LGE3M35120Q

LGE · FETs & Power MOSFETs · MPN LGE3M35120Q

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Specifications

Drain to Source Voltage1.2kV
Gate Charge(Qg)135nC
Output Capacitance(Coss)128pF
Current - Continuous Drain(Id)69A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.7V
Pd - Power Dissipation300W
RDS(on)45mΩ
Reverse Transfer Capacitance (Crss@Vds)9pF
Number1 N-channel
Input Capacitance(Ciss)2.66nF
TypeN-Channel

Technical details

1.2kV 69A 3.7V 300W 45mΩ 1 N-channel N-Channel TO-247-4 Single FETs, MOSFETs RoHS

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