LGE · FETs & Power MOSFETs · MPN LGE3M30065Q
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 163nC |
| Current - Continuous Drain(Id) | 92A |
| Output Capacitance(Coss) | 295pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 326W |
| Reverse Transfer Capacitance (Crss@Vds) | 13pF |
| RDS(on) | 36mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.48nF |
| Type | N-Channel |
650V 92A 4V 326W 36mΩ 1 N-channel N-Channel TO-247-4 Single FETs, MOSFETs RoHS