LGE LGE3M18120Q

LGE · FETs & Power MOSFETs · MPN LGE3M18120Q

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Specifications

Drain to Source Voltage1.2kV
Gate Charge(Qg)235nC
Output Capacitance(Coss)225pF
Current - Continuous Drain(Id)105A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.8V
Pd - Power Dissipation428W
RDS(on)26mΩ@20V
Reverse Transfer Capacitance (Crss@Vds)10pF
Number1 N-channel
Input Capacitance(Ciss)4.8nF
TypeN-Channel

Technical details

1.2kV 105A 3.8V 428W 26mΩ@20V 1 N-channel N-Channel TO-247-4 Single FETs, MOSFETs RoHS

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