LGE LGE3M14120Q

LGE · FETs & Power MOSFETs · MPN LGE3M14120Q

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Specifications

Drain to Source Voltage1.2kV
Gate Charge(Qg)230nC
Current - Continuous Drain(Id)152A
Output Capacitance(Coss)235pF
Operating Temperature --40℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation625W
Reverse Transfer Capacitance (Crss@Vds)17.5pF
RDS(on)18mΩ
Number1 N-channel
Input Capacitance(Ciss)5.469nF
TypeN-Channel

Technical details

1.2kV 152A 4V 625W 18mΩ 1 N-channel N-Channel TO-247-4 Single FETs, MOSFETs RoHS

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