LGE G2309

LGE · FETs & Power MOSFETs · MPN G2309

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)5.4nC@10V
Output Capacitance(Coss)22pF
Current - Continuous Drain(Id)2A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1W
RDS(on)300mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)15pF
Number1 P-Channel
Input Capacitance(Ciss)310pF
TypeP-Channel

Technical details

P-Channel 60V 2A 1W Surface Mount SOT-23

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