LGE G2301S

LGE · FETs & Power MOSFETs · MPN G2301S

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Specifications

Gate Charge(Qg)5.3nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)30pF
Current - Continuous Drain(Id)2.3A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1W
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)140mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)177pF
TypeP-Channel

Technical details

P-Channel 20V 2.3A 1W Surface Mount SOT-23

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