LGE DTC114ECA

LGE · Transistors (BJTs) · MPN DTC114ECA

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Specifications

Current - Collector Cutoff-
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO-
DC Current Gain30
Vce Saturation(VCE(sat))300mV
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Output Voltage(VO(on))300mV
Input Resistor10kΩ
Resistor Ratio1
Pd - Power Dissipation200mW

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 200mW Surface Mount SOT-23

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