LGE BSS84DW

LGE · FETs & Power MOSFETs · MPN BSS84DW

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Specifications

Drain to Source Voltage50V
Gate Charge(Qg)530pC@10V
Output Capacitance(Coss)5.9pF
Current - Continuous Drain(Id)180mA
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation300mW
Reverse Transfer Capacitance (Crss@Vds)1.4pF
RDS(on)2.6Ω@10V
Number2 P-Channel
Input Capacitance(Ciss)25.2pF
TypeP-Channel

Technical details

50V 180mA 2V 300mW 2.6Ω@10V 2 P-Channel P-Channel SOT-363 Single FETs, MOSFETs RoHS

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