LGE · FETs & Power MOSFETs · MPN BSS139
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| Gate Charge(Qg) | 910pC@10V |
|---|---|
| Drain to Source Voltage | 50V |
| Output Capacitance(Coss) | 3.5pF |
| Current - Continuous Drain(Id) | 200mA |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 225mW |
| RDS(on) | 1.3Ω@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 2.9pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 22.8pF |
| Type | N-Channel |
50V 200mA 1V 225mW 1.3Ω@10V 1 N-channel N-Channel SOT-23 Single FETs, MOSFETs RoHS