LGE BSS138DW

LGE · FETs & Power MOSFETs · MPN BSS138DW

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Specifications

Gate Charge(Qg)1.7nC
Drain to Source Voltage50V
Output Capacitance(Coss)50pF
Current - Continuous Drain(Id)200mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation200mW
RDS(on)3.5Ω@10V
Reverse Transfer Capacitance (Crss@Vds)8pF
Number1 N-channel
Input Capacitance(Ciss)50pF
TypeN-Channel

Technical details

N-Channel 50V 200mA 200mW Surface Mount SOT-363

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