LGE BCW66H

LGE · Transistors (BJTs) · MPN BCW66H

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Specifications

Current - Collector Cutoff20nA
Transition frequency(fT)170MHz
Collector - Emitter Voltage VCEO75V
Emitter-Base Voltage VEBO5V
DC Current Gain630
Pd - Power Dissipation330mW
Number1 NPN
typeNPN
Current - Collector(Ic)800mA
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))700mV

Technical details

Bipolar (BJT) Transistor NPN 75V 800mA 170MHz 330mW Surface Mount SOT-23

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