LGE · FETs & Power MOSFETs · MPN AO3416
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| Gate Charge(Qg) | 8.3nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 6.5A |
| Output Capacitance(Coss) | 108pF |
| Gate Threshold Voltage (Vgs(th)) | 700mV |
| Pd - Power Dissipation | 1.56W |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF |
| RDS(on) | 16.2mΩ@4.5V;17.3mΩ@3.3V;20mΩ@2.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 450pF |
| Type | N-Channel |
20V 6.5A 700mV 1.56W 1 N-channel N-Channel SOT-23 Single FETs, MOSFETs RoHS