LGE AO3415

LGE · FETs & Power MOSFETs · MPN AO3415

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Specifications

Gate Charge(Qg)7.4nC
Drain to Source Voltage20V
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))300mV
Pd - Power Dissipation1.5W
RDS(on)41mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)115pF
Number1 P-Channel
Input Capacitance(Ciss)905pF

Technical details

P-Channel 20V 4A 1.5W Surface Mount SOT-23

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