LGE AO3414

LGE · FETs & Power MOSFETs · MPN AO3414

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)4.7nC@5V
Output Capacitance(Coss)46pF
Current - Continuous Drain(Id)4.5A
Gate Threshold Voltage (Vgs(th))600mV
Pd - Power Dissipation1.2W
Reverse Transfer Capacitance (Crss@Vds)42pF
RDS(on)22mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)280pF
TypeN-Channel

Technical details

20V 4.5A 600mV 1.2W 22mΩ@4.5V 1 N-channel N-Channel SOT-23 Single FETs, MOSFETs RoHS

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