LGE 2SC2655

LGE · Transistors (BJTs) · MPN 2SC2655

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Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO5V
DC Current Gain150
Pd - Power Dissipation900mW
Number1 NPN
typeNPN
Current - Collector(Ic)2A
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor NPN 50V 2A 100MHz 0.9W Through Hole TO-92L

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