LGE 13003

LGE · Transistors (BJTs) · MPN 13003

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Specifications

Current - Collector Cutoff1mA
Transition frequency(fT)5MHz
Collector - Emitter Voltage VCEO400V
Emitter-Base Voltage VEBO7V
DC Current Gain40
Pd - Power Dissipation750mW
Number1 NPN
typeNPN
Current - Collector(Ic)1.5A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))1V

Technical details

Bipolar (BJT) Transistor NPN 400V 1.5A 5MHz Through Hole TO-92

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