Lewa Micro · FETs & Power MOSFETs · MPN LWT4T02HD5
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| Output Capacitance(Coss) | 1.828nF |
|---|---|
| Pd - Power Dissipation | 89W |
| Gate Charge(Qg) | 52nC |
| Configuration | - |
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 2.6V |
| Reverse Transfer Capacitance (Crss@Vds) | 87.8pF |
| RDS(on) | 1.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.579nF |
89W 40V 2.6V 1.4mΩ@10V 1 N-channel N-Channel PDFN-8L(5x6) Single FETs, MOSFETs RoHS