Lewa Micro LWT4T015AX

Lewa Micro · FETs & Power MOSFETs · MPN LWT4T015AX

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Specifications

Output Capacitance(Coss)1.859nF
Pd - Power Dissipation167W
Configuration-
Gate Charge(Qg)100nC
Drain to Source Voltage40V
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Reverse Transfer Capacitance (Crss@Vds)210pF
RDS(on)1.1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.842nF

Technical details

167W 40V 1.7V 1.1mΩ@10V 1 N-channel N-Channel TOLL-8 Single FETs, MOSFETs RoHS

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