Lewa Micro LWT1H7AM

Lewa Micro · FETs & Power MOSFETs · MPN LWT1H7AM

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Specifications

Gate Charge(Qg)5nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)4.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation2W
RDS(on)75mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)9.4pF
Number1 N-channel
Input Capacitance(Ciss)171pF

Technical details

100V 4.5A 2W Surface Mount SOT-23

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