Lewa Micro · FETs & Power MOSFETs · MPN LWT1H70AD3
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| Output Capacitance(Coss) | 58pF |
|---|---|
| Pd - Power Dissipation | 31W |
| Gate Charge(Qg) | 5nC |
| Configuration | - |
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| RDS(on) | 60mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 1.9pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 171pF |
31W 100V 1.8V 60mΩ@10V 1 N-channel N-Channel PDFN-8L(3.3x3.3) Single FETs, MOSFETs RoHS