Lewa Micro · FETs & Power MOSFETs · MPN LWT1H6AQ
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| Output Capacitance(Coss) | 41pF |
|---|---|
| Pd - Power Dissipation | 2W |
| Gate Charge(Qg) | 4nC |
| Configuration | - |
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF |
| RDS(on) | 100mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 126pF |
2W 100V 1.8V 100mΩ@10V 1 N-channel N-Channel SOT-89 Single FETs, MOSFETs RoHS