Lewa Micro · FETs & Power MOSFETs · MPN LWT1H6AM
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 3.81nC@10V |
| Current - Continuous Drain(Id) | 4A |
| Output Capacitance(Coss) | 40.6pF |
| Operating Temperature - | -55℃~+150℃ |
| Pd - Power Dissipation | 2W |
| RDS(on) | 145mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 126pF |
100V 4A 2W Surface Mount SOT-23