Lewa Micro · FETs & Power MOSFETs · MPN LWT1H207H8
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| Output Capacitance(Coss) | 422pF |
|---|---|
| Pd - Power Dissipation | 227W |
| Configuration | - |
| Gate Charge(Qg) | 60nC |
| Drain to Source Voltage | 120V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| RDS(on) | 6mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 7.8pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.021nF |
227W 120V 3V 6mΩ@10V 1 N-channel N-Channel TO-220AB Single FETs, MOSFETs RoHS