Lewa Micro · FETs & Power MOSFETs · MPN LWT1H10AM
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 2.01nC@10V |
| Output Capacitance(Coss) | 12.7pF |
| Current - Continuous Drain(Id) | 1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 950mW |
| Reverse Transfer Capacitance (Crss@Vds) | 0.9pF |
| RDS(on) | 450mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 33.7pF |
100V 1A 0.95W Surface Mount SOT-23