Lewa Micro · FETs & Power MOSFETs · MPN LWT1H04HD5
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| Output Capacitance(Coss) | 1.342nF |
|---|---|
| Pd - Power Dissipation | 132W |
| Configuration | - |
| Drain to Source Voltage | 100V |
| Gate Charge(Qg) | 68nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| RDS(on) | 3.6mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 29pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.04nF |
132W 100V 3V 3.6mΩ@10V 1 N-channel N-Channel PDFN-8L(5x6) Single FETs, MOSFETs RoHS