Lewa Micro · FETs & Power MOSFETs · MPN LWT1H02HB
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| Output Capacitance(Coss) | 3.126nF |
|---|---|
| Pd - Power Dissipation | 250W |
| Gate Charge(Qg) | 112nC |
| Configuration | - |
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 3.3V |
| Reverse Transfer Capacitance (Crss@Vds) | 68pF |
| RDS(on) | 1.6mΩ@10V |
| Number | - |
| Input Capacitance(Ciss) | 8.54nF |
250W 100V 3.3V 1.6mΩ@10V TO-263-7L Single FETs, MOSFETs RoHS