Lewa Micro · FETs & Power MOSFETs · MPN LWS6T10AM
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| Output Capacitance(Coss) | 3.7pF |
|---|---|
| Pd - Power Dissipation | 350mW |
| Drain to Source Voltage | 60V |
| Configuration | - |
| Gate Charge(Qg) | 870pC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| RDS(on) | 1.5Ω@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 1.4pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 13.8pF |
350mW 60V 1.5V 1.5Ω@10V 1 P-Channel P-Channel SOT-23 Single FETs, MOSFETs RoHS