Lewa Micro LWS6T10AF

Lewa Micro · FETs & Power MOSFETs · MPN LWS6T10AF

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Specifications

Output Capacitance(Coss)3.7pF
Pd - Power Dissipation270mW
Drain to Source Voltage60V
Configuration-
Gate Charge(Qg)870pC
Current - Continuous Drain(Id)-
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1.5V
RDS(on)1.5Ω@10V
Reverse Transfer Capacitance (Crss@Vds)1.4pF
Number1 P-Channel
Input Capacitance(Ciss)13.8pF

Technical details

270mW 60V 1.5V 1.5Ω@10V 1 P-Channel P-Channel SOT-523 Single FETs, MOSFETs RoHS

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