Lewa Micro · FETs & Power MOSFETs · MPN LWS6060ASD
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| Output Capacitance(Coss) | 112pF |
|---|---|
| Pd - Power Dissipation | 2.4W |
| Drain to Source Voltage | 60V |
| Configuration | - |
| Gate Charge(Qg) | 11.6nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| RDS(on) | 42mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 6.6pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 642pF |
2.4W 60V 1.7V 42mΩ@10V 1 P-Channel P-Channel SOP-8 Single FETs, MOSFETs RoHS