Lewa Micro LWS6060AD3

Lewa Micro · FETs & Power MOSFETs · MPN LWS6060AD3

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Specifications

Output Capacitance(Coss)114pF
Pd - Power Dissipation30W
Drain to Source Voltage60V
Configuration-
Gate Charge(Qg)12.5nC
Current - Continuous Drain(Id)-
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1.7V
RDS(on)40mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)7.1pF
Number1 N-channel
Input Capacitance(Ciss)660pF

Technical details

30W 60V 1.7V 40mΩ@10V 1 N-channel N-Channel PDFN-8L(3.3x3.3) Single FETs, MOSFETs RoHS

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