Lewa Micro · FETs & Power MOSFETs · MPN LWS6016A8
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| Output Capacitance(Coss) | 484pF |
|---|---|
| Pd - Power Dissipation | 156W |
| Drain to Source Voltage | 60V |
| Configuration | - |
| Gate Charge(Qg) | 39nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| RDS(on) | 11mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 9.4pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 2.63nF |
156W 60V 1.8V 11mΩ@10V 1 P-Channel P-Channel TO-220AB Single FETs, MOSFETs RoHS