Lewa Micro · FETs & Power MOSFETs · MPN LWS1H90B4
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| Output Capacitance(Coss) | 82.5pF |
|---|---|
| Pd - Power Dissipation | 80W |
| Configuration | - |
| Drain to Source Voltage | 100V |
| Gate Charge(Qg) | 20nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| RDS(on) | 73mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 9.59pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.077nF |
80W 100V 1.8V 73mΩ@10V 1 P-Channel P-Channel TO-252 Single FETs, MOSFETs RoHS