Lewa Micro · FETs & Power MOSFETs · MPN LWS1H6AM
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| Gate Charge(Qg) | 4.35nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 700mA |
| Output Capacitance(Coss) | 9.53pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 1W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.5pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 141pF |
100V 0.7A 1W Surface Mount SOT-23