Lewa Micro · FETs & Power MOSFETs · MPN LWS1H45A9
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| Output Capacitance(Coss) | 168pF |
|---|---|
| Pd - Power Dissipation | 42W |
| Configuration | - |
| Drain to Source Voltage | 100V |
| Gate Charge(Qg) | 38nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| RDS(on) | 45mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 26pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 2.1nF |
42W 100V 2V 45mΩ@10V 1 P-Channel P-Channel TO-220F Single FETs, MOSFETs RoHS