Lewa Micro LWS1H45A4

Lewa Micro · FETs & Power MOSFETs · MPN LWS1H45A4

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Specifications

Gate Charge(Qg)38nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)168pF
Current - Continuous Drain(Id)32A
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation89W
Reverse Transfer Capacitance (Crss@Vds)26pF
RDS(on)55mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)2.1nF

Technical details

100V 32A 89W Surface Mount TO-252

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