Lewa Micro · FETs & Power MOSFETs · MPN LWS1H150AD3
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| Output Capacitance(Coss) | 53.6pF |
|---|---|
| Pd - Power Dissipation | 40W |
| Gate Charge(Qg) | 12.2nC |
| Configuration | - |
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Reverse Transfer Capacitance (Crss@Vds) | 6.6pF |
| RDS(on) | 115mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 677pF |
40W 100V 1.7V 115mΩ@10V 1 P-Channel P-Channel DFN-8(3x3) Single FETs, MOSFETs RoHS