Lewa Micro LWS1H150A23

Lewa Micro · FETs & Power MOSFETs · MPN LWS1H150A23

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)12.2nC@10V
Output Capacitance(Coss)53.6pF
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation5W
Reverse Transfer Capacitance (Crss@Vds)6.6pF
RDS(on)150mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)677pF

Technical details

100V 4A 5W Surface Mount SOT-223

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