Lewa Micro LWS1H11AM

Lewa Micro · FETs & Power MOSFETs · MPN LWS1H11AM

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Specifications

Output Capacitance(Coss)7.5pF
Pd - Power Dissipation500mW
Configuration-
Drain to Source Voltage100V
Gate Charge(Qg)3.4nC
Current - Continuous Drain(Id)-
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1.5V
Reverse Transfer Capacitance (Crss@Vds)0.9pF
RDS(on)900mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)79pF

Technical details

500mW 100V 1.5V 900mΩ@10V 1 P-Channel P-Channel SOT-23 Single FETs, MOSFETs RoHS

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