Lewa Micro · FETs & Power MOSFETs · MPN LWS1H08H8
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| Output Capacitance(Coss) | 998pF |
|---|---|
| Pd - Power Dissipation | 305W |
| Configuration | - |
| Gate Charge(Qg) | 170nC |
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Reverse Transfer Capacitance (Crss@Vds) | 139pF |
| RDS(on) | 7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 11.687nF |
305W 100V 3V 7mΩ@10V 1 N-channel TO-220AB Single FETs, MOSFETs RoHS