Lewa Micro LWN3012BD3

Lewa Micro · FETs & Power MOSFETs · MPN LWN3012BD3

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Specifications

Output Capacitance(Coss)180pF
Pd - Power Dissipation20W
Gate Charge(Qg)30nC
Configuration-
Drain to Source Voltage30V
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Reverse Transfer Capacitance (Crss@Vds)160pF
RDS(on)5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.237nF

Technical details

20W 30V 1.5V 5mΩ@10V 1 N-channel N-Channel PDFN-8L(3.3x3.3) Single FETs, MOSFETs RoHS

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