Lewa Micro · FETs & Power MOSFETs · MPN LWN2H550AT
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| Gate Charge(Qg) | 12.5nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 11.6pF |
| Current - Continuous Drain(Id) | 1.2A |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 1.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 8.5pF |
| RDS(on) | 550mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 461pF |
200V 1.2A 1.6W Surface Mount SOT-23-6L