Lewa Micro · FETs & Power MOSFETs · MPN LWN2H550AD2
No reviews yet — be the first to review Lewa Micro LWN2H550AD2.
| Gate Charge(Qg) | 12.5nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 11.6pF |
| Current - Continuous Drain(Id) | 2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 3W |
| RDS(on) | 550mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 8.5pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 461pF |
200V 2A 3W Surface Mount DFN2x2-6L