Lewa Micro · FETs & Power MOSFETs · MPN LWN2H550A4
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| Output Capacitance(Coss) | 12pF |
|---|---|
| Pd - Power Dissipation | 30W |
| Configuration | - |
| Gate Charge(Qg) | 12.5nC |
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Reverse Transfer Capacitance (Crss@Vds) | 8.5pF |
| RDS(on) | 450mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 461pF |
30W 200V 2V 450mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS