Lewa Micro LWN2005AD3

Lewa Micro · FETs & Power MOSFETs · MPN LWN2005AD3

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Specifications

Output Capacitance(Coss)407pF
Pd - Power Dissipation28W
Drain to Source Voltage20V
Configuration-
Gate Charge(Qg)63nC
Current - Continuous Drain(Id)-
Operating Temperature --
Gate Threshold Voltage (Vgs(th))680mV
Reverse Transfer Capacitance (Crss@Vds)382pF
RDS(on)3.4mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.062nF

Technical details

28W 20V 680mV 3.4mΩ@4.5V 1 N-channel N-Channel PDFN-8L(3.3x3.3) Single FETs, MOSFETs RoHS

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