Lewa Micro LWN1H5290A4

Lewa Micro · FETs & Power MOSFETs · MPN LWN1H5290A4

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Specifications

Drain to Source Voltage150V
Gate Charge(Qg)13.2nC@10V
Current - Continuous Drain(Id)10A
Output Capacitance(Coss)717pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation30W
RDS(on)290mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)11pF
Number1 N-channel
Input Capacitance(Ciss)425pF

Technical details

150V 10A 30W Surface Mount TO-252

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