Lewa Micro · FETs & Power MOSFETs · MPN LWN1H5160A23
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| Output Capacitance(Coss) | 35pF |
|---|---|
| Pd - Power Dissipation | 2.7W |
| Configuration | - |
| Drain to Source Voltage | 150V |
| Gate Charge(Qg) | 25nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 1.9V |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| RDS(on) | 110mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 896pF |
2.7W 150V 1.9V 110mΩ@10V 1 N-channel N-Channel SOT-223 Single FETs, MOSFETs RoHS