Lewa Micro LWD6003AD5

Lewa Micro · FETs & Power MOSFETs · MPN LWD6003AD5

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Specifications

Output Capacitance(Coss)100pF
Pd - Power Dissipation80W
Gate Charge(Qg)50nC
Drain to Source Voltage60V
Configuration-
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.55V
RDS(on)17mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)84pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)2.285nF

Technical details

80W 60V 1.55V 17mΩ@10V 1 N-Channel + 1 P-Channel N-Channel + P-Channel PDFN-8L(5x6) Single FETs, MOSFETs RoHS

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